MIL-PRF-19500 Datasheet | STMicroelectronics

The documentation and process conversion measures necessary to ply with this revision shall be pleted by 31 November 2000. INCH-POUND MIL-PRF-19500/376E 31 August 2000 SUPERSEDING MIL-PRF-19500/376D 21 August 1998 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES 2N2484, 2N2484UA, 2N2484UB, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power transistors. Four levels of product assurance is provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for die. 1.2 Physical dimensions. See figure 1 (similar to T0-18), figures 2 and 3 (surface mount case outlines UA and UB), and figures 4 and 5 (die). 1.3 Maximum ratings. Types PT TA = +25°C VCBO VEBO VCEO TJ and TSTG RθJA RθJC m W 2N2484 2N2484UA 2N2484UB 500 (1) 650 (2) 500 (1) V dc 60 60 60 V dc 6 6 6 V dc 60 60 60 m A dc 50 50 50 °C -65 to +200 -65 to +200 -65 to +200 °C/W 325 210 325 °C/W 146 160 146 (1) Derate linearly at 3.08 m W/°C above TA = +37.5°C (2) Derate linearly at 4.76 m W/°C above TA = +63.5°C. 1.4 Primary electrical characteristics. hfe Limits VCE = 5 V dc IC = 1 m A dc f = 1 k Hz Cobo IE = 0 VCB = 5 V dc 100 k Hz ≤ f ≤ 1 MHz p F Min Max 250 900 2.0 7.0 |hfe|2 IC = 500 µ A dc VCE = 5 V dc f = 30 MHz VCE(sat) (1) IC = 1.0 m A dc IB = 0.1 m A dc V dc (1) Pulsed (see 4.5.1). Beneficial ments (remendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC/VAC, Post Office Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public...