MSC83303 Description
The MSC83303 is a mon base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC83303 is designed for Class C amplifier/oscillator applications in the 1.0 - 3.0 GHz frequency range.