Download MSC83305 Datasheet PDF
MSC83305 page 2
Page 2
MSC83305 page 3
Page 3

MSC83305 Description

The MSC83305 is a mon base hermetically sealed silicon NPN microwave power transistor utilizing an emitter site ballasted geometry with a refractory gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC83305 was designed for Class C amplifier/oscillator applications in the 1.0 - 3.0 GHz frequency range.