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MSC83303 Datasheet Rf & Microwave Transistors

Manufacturer: STMicroelectronics

Overview: MSC83303 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS . . . . . REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC ® PACKAGE P OUT = 3.0 W MIN. WITH 7.0 dB GAIN @ 3.0 GHz .250 2LFL (S010) hermetically sealed ORDER CODE MSC83303 BRANDING 83303 PIN CONNECTION ..

General Description

The MSC83303 is a mon base hermetically sealed silicon NPN microwave power transistor utilizing an overlay, emitter site ballasted geometry with a refractory/gold metallization system.

This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions.

The MSC83303 is designed for Class C amplifier/oscillator applications in the 1.0 - 3.0 GHz frequency range.

MSC83303 Distributor