The MSC83305 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an emitter site ballasted geometry with a refractory gold metallization system.
This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions.
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS
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MSC83305
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS
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REFRACTORY/GOLD METALLIZATION EMITTER BALLASTED VSWR CAPABILITY ∞:1 @ RATED CONDITIONS HERMETIC STRIPAC® PACKAGE POUT = 4.5 W MIN. WITH 4.5 dB GAIN @ 3.0 GHz
.250 2LFL (S010) hermetically sealed ORDER CODE BRANDING 83305 MSC83305
PIN CONNECTION
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DESCRIPTION The MSC83305 is a common base hermetically sealed silicon NPN microwave power transistor utilizing an emitter site ballasted geometry with a refractory gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated conditions. The MSC83305 was designed for Class C amplifier/oscillator applications in the 1.0 - 3.0 GHz frequency range.
MSC83305 Datasheet
