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STMicroelectronics Electronic Components Datasheet

N2NE10L Datasheet

N-Channel MOSFET

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STN2NE10L
N-channel 100V - 0.33-2A - SOT-223
STripFET™ Power MOSFET
General features
Type
VDSS
(@Tjmax)
RDS(on)
ID
2
STN2NE10L
100V
<0.4
1.8A
3
Exceptional dv/dt capability
2
1
Avalanche rugged technology
SOT-223
100% avalanche tested
) Low threshold drive
ct(s Description
du This Power MOSFET is the latest development of
ro STMicroelectronics unique "Single Feature
P Size™" strip-based process. The resulting
transistor shows extremely high packing density
te for low on-resistance, rugged avalanche
le characteristics and less critical alignment steps
o therefore a remarkable manufacturing
bs reproducibility.
Internal schematic diagram
ct(s) - O Applications
du Switching application
Obsolete Pro Order codes
Part number
STN2NE10L
Marking
N2NE10L
Package
SOT-223
Packaging
Tape & reel
February 2007
Rev 5
1/12
www.st.com
12


STMicroelectronics Electronic Components Datasheet

N2NE10L Datasheet

N-Channel MOSFET

No Preview Available !

Contents
Contents
STN2NE10L
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Obsolete Product(s) - Obsolete Product(s)
2/12


Part Number N2NE10L
Description N-Channel MOSFET
Maker STMicroelectronics
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N2NE10L Datasheet PDF






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