N790A - low voltage PNP transistor

Description

The device in manufactured in low voltage PNP planar technology by using a “Base Island” layout.

The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

Figure 1.

Features

Very low collector to emitter saturation voltage.
DC current gain, hFE >100.
3 A continuous collector current.
40 V breakdown voltage V(BR)CER.
SOT-223 plastic package for surface mounting circuits in tape and reel packing.

STMicroelectronics

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Datasheet Details

Part number	N790A
Manufacturer	STMicroelectronics
File Size	178.06 KB
Description	low voltage PNP transistor
Datasheet	N790A Datasheet
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STN790A Medium current, high performance, low voltage PNP transistor Features ■ Very low collector to emitter saturation voltage ■ DC current gain, hFE >100 ■ 3 A continuous collector current ■ 40 V breakdown voltage V(BR)CER ■ SOT-223 plastic package for surface mounting circuits in tape and reel packing Applications ■ Power management in portable equipment ■ Voltage regulation in bias supply circuits ■ Switching regulator in battery charger applications ■ Heavy load driver Description The device in manufactured in low voltage PNP planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. 4 1 SOT-223 3 2 Figure 1. Internal schematic diagram Table 1.

Published: Aug 7, 2019 |