N790A
Description
The device in manufactured in low voltage PNP planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.
Key Features
- Very low collector to emitter saturation voltage
- DC current gain, hFE >100
- 3 A continuous collector current
- 40 V breakdown voltage V(BR)CER
- SOT-223 plastic package for surface mounting circuits in tape and reel packing
