N790A Description
The device in manufactured in low voltage PNP planar technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. 4 1 SOT-223 3 2 Figure.
N790A Key Features
- Very low collector to emitter saturation voltage
- DC current gain, hFE >100
- 3 A continuous collector current
- 40 V breakdown voltage V(BR)CER
- SOT-223 plastic package for surface mounting
N790A Applications
- Power management in portable equipment
- Voltage regulation in bias supply circuits
- Switching regulator in battery charger