Datasheet Summary
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NAND04GW3B2B NAND08GW3B2A
4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories
PRELIMINARY DATA
Feature summary
- High density NAND Flash Memory
- up to 8 Gbit memory array
- Up to 256 Mbit spare area
- Cost effective solution for mass storage applications NAND Interface
- x8 bus width
- Multiplexed Address/ Data Supply voltage
- 3.0V device: VDD = 2.7 to 3.6V Page size
- (2048 + 64 spare) Bytes Block size
- (128K + 4K spare) Bytes Page Read/Program
- Random access: 25µs (max)
- Sequential access: 30ns (min)
- Page program time: 200µs (typ) Copy Back Program mode
- Fast page copy without external buffering Cache Program and Cache Read modes
- Internal...
