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NAND04GW3B2B Datasheet PDF

Numonyx NAND04GW3B2B

NAND Flash Memories

Part No. NAND04GW3B2B
Datasheet NAND04GW3B2B Download
Manufacturer
Numonyx
Description NAND Flash Memories
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NAND04GW3B2B datasheet page 1 preview

FEATURES

● High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage applications
● NAND Interface – x8 bus width – Multiplexed Address/ Data
● Supply voltage – 3.0V device: VDD = 2.7 to 3.6V
● Page size – (2048 + 64 spare) Bytes
● Block size – (128K + 4K spare) Bytes
● Page Read/Program – Random access: 25µs (max) – Sequential access: 30ns (min) – Page program time: 200µs (typ)
● Copy Back Program mode – Fast page copy without external buffering
● Cache Program and Cache Read modes – Internal Cache Register to improve the program and read throughputs
● Fast Block Erase – Block erase time: 2ms (typ)
● Status Register
● Electronic Signature
● Chip Enable ‘don’t care’ – for simple interface with microcontroller
● Serial Number option TSOP48 12 x 20mm
● Data protection – Hardware and Software Block Locking – Hardware Program/Erase locked during Power transitions
● Data integrity – 100,000 Program/Erase cycles (with EC...
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