STMicroelectronics NAND04GW3B2B
This is preliminary information on a new product now in development or undergoing evaluation.NAND04GW3B2B NAND08GW3B2A 4 Gbit, 8 Gbit, 2112 Byte/1056 Word Page 3V, NAND Flash Memories PRELIMINARY DATA Feature summary
● High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage applications NAND Interface – x8 bus width – Multiplexed Address/ Data Supply voltage – 3.0V device: VDD = 2.7 to 3.6V Page size – (2048 + 64 spare) Bytes Block size – (128K + 4K spare) Bytes Page Read/Program – Random access: 25µs (max) – Sequential access: 30ns (min) – Page program time: 200µs (typ) Copy Back Program mode – Fast page copy without external buffering Cache Program and Cache Read modes – Internal Cache Register to improve the program and read throughputs Fast Block Erase – Block erase time: 2ms (typ) Status Register Electronic Signature Chip Enable ‘don’t care’ – for simple interface with microcontroller Serial Number option
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● TSOP48 12 x 20mm
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● Data protection – Hardware and Software Block Locking – Hardwa...
● High density NAND Flash Memory – up to 8 Gbit memory array – Up to 256 Mbit spare area – Cost effective solution for mass storage applications NAND Interface – x8 bus width – Multiplexed Address/ Data Supply voltage – 3.0V device: VDD = 2.7 to 3.6V Page size – (2048 + 64 spare) Bytes Block size – (128K + 4K spare) Bytes Page Read/Program – Random access: 25µs (max) – Sequential access: 30ns (min) – Page program time: 200µs (typ) Copy Back Program mode – Fast page copy without external buffering Cache Program and Cache Read modes – Internal Cache Register to improve the program and read throughputs Fast Block Erase – Block erase time: 2ms (typ) Status Register Electronic Signature Chip Enable ‘don’t care’ – for simple interface with microcontroller Serial Number option
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● TSOP48 12 x 20mm
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● Data protection – Hardware and Software Block Locking – Hardwa...