NAND512R4A2C Datasheet | STMicroelectronics

.. NAND512R3A2C NAND512R4A2C NAND512W3A2C NAND512W4A2C 512 Mbit, 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories Features - High density NAND Flash memories - - 512 Mbit memory array Cost effective solutions for mass storage applications x8 or x16 bus width Multiplexed Address/ Data FBGA - NAND interface - - TSOP48 12 x 20mm - - Supply voltage: 1.8V, 3.0V Page size - - x8 device: (512 + 16 spare) Bytes x16 device: (256 + 8 spare) Words x8 device: (16K + 512 spare) Bytes x16 device: (8K + 256 spare) Words Random access: 12µs (3V)/15µs (1.8V) (max) Sequential access: 30ns (3V)/50ns (1.8V) (min) Page Program time: 200µs (typ) - - - - Block size - - VFBGA55 8 x 10 x 1mm VFBGA63 9 x 11 x 1mm Hardware Data Protection - Program/Erase locked during Power transitions 100,000 Program/Erase cycles (with ECC) 10 years Data Retention - Page Read/Program - - - - Data integrity - - - - - - - - Copy Back Program mode Fast Block Erase: 2ms (Typ) Status Register Electronic Signature Chip Enable ‘don’t care’ Serial Number option Device summary Reference...