NK50ZFP Datasheet | STMicroelectronics

DESCRIPTION The Super MESH™ series is obtained through an extreme optimization of ST’s well established stripbased Power MESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series plements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s LIGHTING ORDERING INFORMATION SALES TYPE STP9NK50Z STP9NK50ZFP STB9NK50ZT4 MARKING P9NK50Z P9NK50ZFP B9NK50Z PACKAGE TO-220 TO-220FP D2PAK PACKAGING TUBE TUBE TAPE & REEL June 2002 1/12 STP9NK50Z - STP9NK50ZFP - STB9NK50Z ABSOLUTE MAXIMUM RATINGS Symbol Parameter STP9NK50Z STB9NK50Z Value STP9NK50ZFP Unit VDS VDGR VGS ID ID IDM (l) PTOT VESD(G-S) dv/dt (1) VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate source ESD(HBM-C=100p F, R=1.5KΩ) Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature 7.2 4.5 28.8 110 0.88 500 500 ± 30 7.2 (- ) 4.5 (- ) 28.8 (- ) 30 0.24 3500 4.5 2500 -55 to 150 -55 to 150 V V V A A A W W/°C V V/ns V °C °C (l) Pulse width limited by safe operating area (1) I SD ≤7.2A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, T j ≤ TJMAX. (- ) Limited only by maximum temperature allowed THERMAL DATA TO-220 D2PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.14 62.5 300 TO-220FP 4.2 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID =...