NK50ZFP - N-CHANNEL Power MOSFET

Datasheet Summary

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the Zener voltage is appropriate to achieve an efficient and costeffective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 2/12 STP9NK50Z -.

STMicroelectronics

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Datasheet Details

Part number	NK50ZFP
Manufacturer	STMicroelectronics
File Size	363.31 KB
Description	N-CHANNEL Power MOSFET
Datasheet	NK50ZFP Datasheet
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N-CHANNEL 500V - 0.72Ω - 7.2A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH™ Power MOSFET TYPE STP9NK50Z STP9NK50ZFP STB9NK50Z s s s s s s STP9NK50Z - STP9NK50ZFP STB9NK50Z VDSS 500 V 500 V 500 V RDS(on) < 0.85 Ω < 0.85 Ω < 0.85 Ω ID 7.2 A 7.2 A 7.2 A Pw 110 W 30 W 110 W 3 1 2 www.DataSheet4U.com TYPICAL RDS(on) = 0.72 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 TO-220FP 3 1 D2PAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Published: Jun 13, 2011 |