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P105N3LL - N-channel MOSFET

General Description

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Table 1.

Key Features

  • TAB 3 2 1 TO-220 Order code STP105N3LL VDS 30 V RDS(on) max. ID 3.5 mΩ 150 A.
  • Very low on-resistance.
  • Very low gate charge.
  • High avalanche ruggedness.
  • Low gate drive power loss Figure 1. Internal schematic diagram ' 7$% .
  •  .

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Full PDF Text Transcription for P105N3LL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for P105N3LL. For precise diagrams, and layout, please refer to the original PDF.

STP105N3LL N-channel 30 V, 2.7 mΩ typ., 150 A, STripFET™ H6 Power MOSFET in a TO-220 package Datasheet − production data Features TAB 3 2 1 TO-220 Order code STP105N3LL V...

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et − production data Features TAB 3 2 1 TO-220 Order code STP105N3LL VDS 30 V RDS(on) max. ID 3.5 mΩ 150 A • Very low on-resistance • Very low gate charge • High avalanche ruggedness • Low gate drive power loss Figure 1. Internal schematic diagram ' 7$% *  Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6  $0Y Order code STP105N3LL Table 1. Device summary Marking Packages P105N3LL TO-220 Packaging Tube July 2015 This is inf

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