P105N3LL
Features
3 2 1
TO-220
Order code STP105N3LL
VDS 30 V
RDS(on) max. ID 3.5 mΩ 150 A
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss
Figure 1. Internal schematic diagram
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Applications
- Switching applications
Description
This device is an N-channel Power MOSFET developed using the STrip FET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
6
$0Y
Order code STP105N3LL
Table 1. Device summary
Marking
Packages
TO-220
Packaging Tube
July 2015
This is information on a product in full production.
Doc ID023976 Rev 3
1/13
.st.
Contents
Contents
STP105N3LL
1 Electrical ratings
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