P105N3LL Description
This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. 6 $0Y Order code STP105N3LL Table.
P105N3LL Key Features
- Very low on-resistance
- Very low gate charge
- High avalanche ruggedness
- Low gate drive power loss