Datasheet Details
| Part number | P4NB80 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 275.40 KB |
| Description | STP4NB80 |
| Datasheet |
 P4NB80 Datasheet
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| Part number | P4NB80 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 275.40 KB |
| Description | STP4NB80 |
| Datasheet |
P4NB80 Datasheet
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Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( • ) P tot dv/dt(1 ) V ISO T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max.
® STP4NB80 STP4NB80FP N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH™ MOSFET TYPE STP4NB80 STP4NB80FP www.DataSheet4U.com s s s s s V DSS 800 V 800 V R DS(on) 3.3 Ω 3.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
P4NB80 | Power MOSFET | VBsemi |
| Part Number | Description |
|---|---|
| P4NB80FP | STP4NB80FP |
| P4NB50 | N-CHANNEL MOSFET |
| P4N150 | N-CHANNEL MOSFET |
| P4N20 | N-channel Power MOSFET |
| P4NA60FI | STP4NA60FI |
| P4NC50 | STP4NC50 |
| P4NC60AFP | N-CHANNEL MOSFET |
| P4NK50Z | STP4NK50Z |
| P4NK60Z | STP4NK60Z |
| P4NK80Z | STP4NK80Z |