| Part Number | P4NB80 Datasheet |
|---|---|
| Manufacturer | STMicroelectronics |
| Overview |
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with.
DS V DGR V GS ID ID IDM ( * ) P tot dv/dt(1 ) V ISO T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o. |
P4NB80 Datasheet and Specifications PDF
The P4NB80 is a STP4NB80.
| Part Number | P4NB80 Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | VBsemi |
| Overview |
P4NB80-VB
P4NB80-VB Datasheet
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
850
VGS = 10 V
2.7
78
9.6
45
Single
FEATURES • .
* Halogen-free According to IEC 61249-2-21 Definition * Dynamic dV/dt Rating * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements * Compliant to RoHS Directive 2002/95/EC TO-220AB D S D G G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unles. |