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P4NC60AFP - N-CHANNEL MOSFET

Description

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.

area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

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Datasheet preview – P4NC60AFP

Datasheet Details

Part number P4NC60AFP
Manufacturer STMicroelectronics
File Size 336.36 KB
Description N-CHANNEL MOSFET
Datasheet download datasheet P4NC60AFP Datasheet
Additional preview pages of the P4NC60AFP datasheet.

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Full PDF Text Transcription

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STP4NC60A - STP4NC60AFP STB4NC60A-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STP4NC60A STP4NC60AFP STB4NC60A-1 600V 600V 600V < 2Ω < 2Ω < 2Ω 4.2A 4.2A 4.2A s TYPICAL RDS(on) = 1.8Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s NEW HIGH VOLTAGE BENCHMARK s GATE CHARGE MINIMIZED DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
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