Datasheet Details
| Part number | P4NC60FP |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 276.30 KB |
| Description | STP4NC60FP |
| Datasheet | P4NC60FP_STMicroelectronics.pdf |
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Overview: .. STP4NC60 - STP4NC60FP STB4NC60-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET TYPE STP4NC60 STP4NC60FP STB4NC60-1 s s s s s VDSS 600V 600V 600V RDS(on) < 2.2Ω < 2.2Ω < 2.2Ω ID 4.2A 4.2A 4.2A 3 1 2 TYPICAL RDS(on) = 1.
| Part number | P4NC60FP |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 276.30 KB |
| Description | STP4NC60FP |
| Datasheet | P4NC60FP_STMicroelectronics.pdf |
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The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.
The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVERS I PAK (Tabless TO-220) 2 12 3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
P4NC60AFP | N-CHANNEL MOSFET | STMicroelectronics |
| Part Number | Description |
|---|---|
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| P4NA80FI | STP4NA80FI |
| P4NB10 | STP4NB10 |
| P4NB100 | STP4NB100 |
| P4NK60ZFP | STP4NK60ZFP |