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STP4NC60A - STP4NC60AFP
STB4NC60A-1
N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK
PowerMesh™II MOSFET
TYPE
VDSS
RDS(on)
ID
STP4NC60A STP4NC60AFP STB4NC60A-1
600V 600V 600V
< 2Ω < 2Ω < 2Ω
4.2A 4.2A 4.2A
s TYPICAL RDS(on) = 1.8Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s NEW HIGH VOLTAGE BENCHMARK s GATE CHARGE MINIMIZED
DESCRIPTION
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re-
finements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.