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P4NC60AFP Datasheet N-channel MOSFET

Manufacturer: STMicroelectronics

Overview: STP4NC60A - STP4NC60AFP STB4NC60A-1 N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STP4NC60A STP4NC60AFP STB4NC60A-1 600V 600V 600V < 2Ω < 2Ω < 2Ω 4.2A 4.2A 4.2A s TYPICAL RDS(on) = 1.

General Description

The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.

The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVERS TO-220 3 2 1 TO-220FP 123 (Tabless TO-220) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) VDGR Drain-gate Voltage (RGS = 20 kΩ) VGS Gate- source Voltage ID Drain Current (continuos) at TC = 25°C ID Drain Current (continuos) at TC = 100°C IDM (q) Drain Current (pulsed) PTOT Total Dissipation at TC = 25°C Derating Factor dv/dt(1) Peak Diode Recovery voltage slope VISO Insulation Withstand Voltage (DC) Tstg Storage Temperature Tj Max.

Similar Datasheet

Brand Logo Part Number Description Manufacturer
ST Microelectronics Logo P4NC60 STP4NC60 ST Microelectronics
ST Microelectronics Logo P4NC60FP STP4NC60FP ST Microelectronics

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