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STP4NC60 - STP4NC60FP STB4NC60-1
N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I2PAK PowerMesh™II MOSFET
TYPE STP4NC60 STP4NC60FP STB4NC60-1
s s s s s
VDSS 600V 600V 600V
RDS(on) < 2.2Ω < 2.2Ω < 2.2Ω
ID 4.2A 4.2A 4.2A
3 1 2
TYPICAL RDS(on) = 1.8Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED
TO-220
TO-220FP
DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.