P4NM60 - N-channel Power MOSFET

STMicroelectronics

Datasheet Details

PModems technology applies the benefits of the temultiple drain process to STMicroelectronics' well- known PowerMESH™ horizontal layout structure.

leThe resulting product offers low on-resistance, sohigh dv/dt capability and excellent avalanche Obcharacteristics.

3 2 1 TO-220 3 1 DPAK IPAK 3 2 1 Figure 1.

STP4NM60 STD3NM60, STD3NM60-1 N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh™ Power.

Type VDSS RDS(on) (@Tjmax) max )STD3NM60 t(sSTD3NM60-1 650 < 1.5 Ω cSTP4NM60 ID 3A 4A PW 42 W 69 W rodu.
High dv/dt and avalanche capabilities te P.
Improved ESD capability le.
Low input capacitance and gate charge o.
Low gate input resistance bs.
Tight process control and high manufacturing Oyields t(s) -.