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m o .c U 4 t e STP50NE10L e h S N - CHANNEL 100V - 0.020Ω - 50A TO-220 a t STripFET™ POWER MOSFET a .D w w w TYPICAL R = 0.020 Ω
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TYPE VDSS R DS(on) ID STP50NE10L 100 V <0.025 Ω 50 A
EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC APPLICATION ORIENTED CHARACTERIZATION
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
P50NE10L Datasheet
