P55NE06L Datasheet | STMicroelectronics

STP55NE06L STP55NE06LFP - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET TYPE STP55NE06L STP55NE06LF P s s s s s s V DSS 60 V 60 V R DS(on) < 0.022 Ω < 0.022 Ω ID 55 A 28 A TYPICAL RDS(on) = 0.018 Ω EXCEPTIONAL dV/dt CAPABILTY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION 1 2 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps...