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P5NK80Z - STP5NK80Z

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Key Features

  • www. DataSheet4U. com Type VDSS (@Tjmax) 800 V 800 V RDS(on) < 2.4 Ω < 2.4 Ω ID 4.3 A 4.3 A 3 1 2 STP5NK80Z STP5NK80ZFP.
  • 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility TO-220 TO-220FP.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STP5NK80Z STP5NK80ZFP N-channel 800V - 1.9Ω - 4.3A - TO-220/TO-220FP Zener-protected SuperMESH™ Power MOSFET General features www.DataSheet4U.com Type VDSS (@Tjmax) 800 V 800 V RDS(on) < 2.4 Ω < 2.4 Ω ID 4.3 A 4.3 A 3 1 2 STP5NK80Z STP5NK80ZFP ■ ■ ■ ■ 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility TO-220 TO-220FP Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.