Datasheet Summary
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STP7NA40 STP7NA40FI
- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP7NA40 STP7NA40FI s s s s s s s
V DSS 400 V 400 V
R DS( on) < 1Ω < 1Ω
ID 6.5 A 4.1 A
TYPICAL RDS(on) = 0.82 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220
3 1 2 1 2
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance....