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P7NA60 - N-Channel MOSFET

Download the P7NA60 datasheet PDF. This datasheet also covers the P7NA60FI variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (P7NA60FI-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
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P7N60FD2 600V SUPER JUNCTION MOS POWER TRANSISTOR Silan Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
P7NA60FI N-Channel MOSFET
P7NC70ZF STP7NC70ZF
P7NK30Z STP7NK30Z
P7NK40ZFP STP7NK40ZFP
P7NK80Z N-channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STP7NA60 STP7NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE ST P 7NA 60 ST P 7NA 60 F I VDSS 600 V 600 V R DS( on) <1Ω <1Ω ID 7.2 A 4.4 A s TYPICAL RDS(on) = 0.92 Ω s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s REPETITIVE AVALANCHE DATA AT 100oC s LOW INTRINSIC CAPACITANCES s GATE GHARGE MINIMIZED s REDUCED THRESHOLD VOLTAGE SPREAD DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
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