| Description | This device is an N-channel Power MOSFET developed using ST’s STripFET™ DeepGATE™ technology. The device has a new gate structure and is specially designed to minimize on-state resistance to provide superior switching performance. TAB 3 2 1 TO-220 Figure 1. Internal schematic diagram $ 4!" ' Table 1. Device summary Order codes STP90N55F4 Marking 90N55F4 3 !-V Packages TO-220 ... |
| Features |
Type STP90N55F4
VDSS 55 V
RDS(on) max < 0.008 Ω
ID 90 A
■ Exceptional dv/dt capability ■ Extremely low on-resistance RDS(on) ■ 100% avalanche tested Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using ST’s STripFET™ DeepGATE™ technology. The device has a new gate structure and is special... |
| Datasheet |
 P90N55F4 Datasheet - 227.26KB |
