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PD20015S-E - Transistors

Download the PD20015S-E datasheet PDF. This datasheet also covers the PD20015-E variant, as both devices belong to the same transistors family and are provided as variant models within a single manufacturer datasheet.

Description

The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broadband commercial and industrial applications.

It operates at 13.6 V in common source mode at frequencies of up to 1 GHz.

Features

  • Excellent thermal stability Common source configuration POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V Plastic package ESD protection In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PD20015-E_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

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PD20015-E Transistors
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Full PDF Text Transcription

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www.DataSheet4U.com PD20015-E PD20015S-E RF power transistor - LdmoST family Preliminary Data Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V Plastic package ESD protection In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead) Description The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF.
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