PD20015C Description
The PD20015C is a mon source N-channel, enhancement-mode lateral FieldEffect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 13.6 V in mon source mode at frequencies of up to 2 GHz.
PD20015C Key Features
- Excellent thermal stability mon source configuration POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V BeO free package ESD p