PD20015C
Overview
The PD20015C is a common source N-channel, enhancement-mode lateral FieldEffect RF power transistor. It is designed for high gain, broadband commercial and industrial applications.
- Excellent thermal stability Common source configuration POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V BeO free package ESD protection In compliance with the 2002/95/EC european directive M243 Epoxy sealed
