PD20015C Datasheet | STMicroelectronics

.. RF power transistor - LdmoST family Preliminary Data Features - - - - - - Excellent thermal stability mon source configuration POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V BeO free package ESD protection In pliance with the 2002/95/EC european directive M243 Epoxy sealed Description The PD20015C is a mon source N-channel, enhancement-mode lateral FieldEffect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 13.6 V in mon source mode at frequencies of up to 2 GHz. PD20015C boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology. PD20015C’s superior...