PD20015S-E Datasheet | STMicroelectronics

.. PD20015-E PD20015S-E RF power transistor - LdmoST family Preliminary Data Features - - - - - - Excellent thermal stability mon source configuration POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V Plastic package ESD protection In pliance with the 2002/95/EC european directive PowerSO-10RF (formed lead) Description The PD20015-E is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 13.6 V in mon source mode at frequencies of up to 1 GHz. PD20015-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology...