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PD20015S-E

Manufacturer: STMicroelectronics

PD20015S-E datasheet by STMicroelectronics.

This datasheet includes multiple variants, all published together in a single manufacturer document.

PD20015S-E datasheet preview

PD20015S-E Datasheet Details

Part number PD20015S-E
Datasheet PD20015S-E PD20015-E Datasheet (PDF)
File Size 302.43 KB
Manufacturer STMicroelectronics
Description Transistors
PD20015S-E page 2 PD20015S-E page 3

PD20015S-E Overview

The PD20015-E is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 13.6 V in mon source mode at frequencies of up to 1 GHz.

PD20015S-E Key Features

  • Excellent thermal stability mon source configuration POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V Plastic package ESD pr
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