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PD84008-E - RF power transistor

Description

The PD84008-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.

It is designed for high gain, broadband commercial and industrial applications.

It operates at 13.6 V in common source mode at frequencies of up to 1 GHz.

Features

  • Excellent thermal stability.
  • Common source configuration.
  • POUT = 8 W with 14.7 dB gain @ 870 MHz / 7.5 V.
  • Plastic package.
  • ESD protection.
  • In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PD84008-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary data Features ■ Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 14.7 dB gain @ 870 MHz / 7.5 V ■ Plastic package ■ ESD protection ■ In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead) Description The PD84008-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD84008-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF.
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