Datasheet Summary
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
Preliminary data
Features
- Excellent thermal stability
- mon source configuration
- POUT = 8 W with 14.7 dB gain @ 870 MHz / 7.5
- Plastic package
- ESD protection
- In pliance with the 2002/95/EC european directive
PowerSO-10RF (formed lead)
Description
The PD84008-E is a mon source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband mercial and industrial applications. It operates at 13.6 V in mon source mode at frequencies of up to 1 GHz. PD84008-E boasts the excellent gain, linearity and reliability of ST’s latest...
