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STMicroelectronics Electronic Components Datasheet

Q1NK80ZR Datasheet

N-CHANNEL MOSFET

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STQ1NK80ZR-AP - STN1NK80Z
STD1NK80Z - STD1NK80Z-1
N-CHANNEL 800V - 13 - 1 A TO-92 /SOT-223/DPAK/IPAK
Zener - Protected SuperMESH™ MOSFET
Table 1: General Features
TYPE
VDSS RDS(on)
ID
Pw
STQ1NK80ZR-AP
STN1NK80Z
STD1NK80Z
STD1NK80Z-1
800 V
800 V
800 V
800 V
< 16
< 16
< 16
< 16
0.3 A
0.25A
1.0 A
1.0 A
3W
2.5 W
45 W
45 W
TYPICAL RDS(on) = 13
EXTREMELY HIGH dv/dt CAPABILITY
ESD IMPROVED CAPABILITY
100% AVALANCHE TESTED
NEW HIGH VOLTAGE BENCHMARK
GATE CHARGE MINIMIZED
DESCRIPTION
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt capability
for the most demanding applications. Such series
complements ST full range of high voltage MOS-
FETs including revolutionary MDmesh™ products.
Figure 1: Package
TO-92 (Ammopack)
2
3
2
1
SOT-223
3
1
DPAK
3
2
1
IPAK
Figure 2: Internal Schematic Diagram
APPLICATIONS
AC ADAPTORS AND BATTERY CHARGERS
SWITH MODE POWER SUPPLIES (SMPS)
Table 2: Order Codes
SALES TYPE
STQ1NK80ZR-AP
STN1NK80Z
STD1NK80ZT4
STD1NK80Z-1
MARKING
Q1NK80ZR
N1NK80Z
D1NK80Z
D1NK80Z
January 2006
PACKAGE
TO-92
SOT-223
DPAK
IPAK
PACKAGING
AMMOPAK
TAPE & REEL
TAPE & REEL
TUBE
Rev. 3
1/15


STMicroelectronics Electronic Components Datasheet

Q1NK80ZR Datasheet

N-CHANNEL MOSFET

No Preview Available !

STQ1NK80ZR-AP - STN1NK80Z - STD1NK80Z - STD1NK80Z-1
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 k)
VGS Gate- source Voltage
ID Drain Current (continuous) at TC = 25°C
ID Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD (HBM-C= 100pF, R= 1.5KΩ)
dv/dt (1) Peak Diode Recovery voltage slope
Tj Operating Junction Temperature
Tstg Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD 1 A, di/dt 200 A/µs, VDD 640
Table 4: Thermal Data
Rthj-case Thermal Resistance Junction-case Max
Rthj-amb(#) Thermal Resistance Junction-ambient Max
Rthj-lead Thermal Resistance Junction-lead Max
Tl Maximum Lead Temperature For Soldering
Purpose
(#) When mounted on 1inch² FR-4 BOARD, 2 oz Cu
Table 5: Avalanche Characteristics
Symbol
Parameter
IAR Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
EAS Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
TO-92
0.3
0.19
3
0.025
Value
SOT-223
800
800
± 30
0.25
0.16
5
2.5
0.02
1000
4.5
Unit
DPAK/IPAK
V
V
V
1.0 A
0.63 A
A
45 W
0.36 W /°C
V
V/ns
-55 to 150
°C
TO-92
--
120
40
260
SOT-223
--
50
--
--
DPAK/IPAK
2.78
100
--
300
Unit
°C/W
°C/W
°C/W
°C
Max Value
1
50
Unit
A
mJ
Table 6: GATE-SOURCE ZENER DIODE
Symbol
Parameter
Test Conditions
BVGSO
Gate-Source Breakdown Igs=± 1mA (Open
Voltage
Drain)
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
2/15


Part Number Q1NK80ZR
Description N-CHANNEL MOSFET
Maker STMicroelectronics
Total Page 15 Pages
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