Q1NK80ZR Key Features
- TYPICAL RDS(on) = 13Ω
- EXTREMELY HIGH dv/dt CAPABILITY
- ESD IMPROVED CAPABILITY
- 100% AVALANCHE TESTED
- NEW HIGH VOLTAGE BENCHMARK
- GATE CHARGE MINIMIZED
- Part: Q1NK80ZR
- Manufacturer: STMicroelectronics (official site)
- Size: 601.04 KB
Related STMicroelectronics Datasheets
| Part Number | Description |
|---|---|
| Q1NC45 | N-CHANNEL MOSFET |
| Q1NC45R-AP | N-CHANNEL MOSFET |
Q1NK80ZR Description
The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series plements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.