RF3L05200CB4
RF3L05200CB4 is RF power LDMOS transistor manufactured by STMicroelectronics.
200 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor
1 2
Pin connection
Pin
Connection
Drain A
Drain B
Source (bottom side)
Gate B
Gate A
Features
Order code RF3L05200CB4
Frequency 650 MHz
VDD 28 V
POUT 200 W
Gain 19 dB
Efficiency 63%
- High efficiency and linear gain operations
- Integrated ESD protection
- Large positive and negative gate-source voltage range for improved class C operation
- In pliance with the European directive 2002/95/EC
Applications
- 2-30 MHz HF or short wave munication
- 30-88 MHz ground munication
- 118-140 MHz Avionics
- 136-174 MHz mercial ground munication
- 30-512 MHz Jammer,...
