RF3L05150CB4 Datasheet | STMicroelectronics

Features Order code RF3L05150CB4 Frequency 520 MHz VDD 28 V POUT 150 W Gain 23 d B Efficiency 60 % - High efficiency and linear gain operations - Integrated ESD protection - Large positive and negative gate-source voltage range for improved class C operation - In pliance with the european directive 2002/95/EC Applications - 2-30 MHz HF or short wave munication - 30-88 MHz ground munication - 118-140 MHz Avionics - 136-174 MHz mercial ground munication - 30-512 MHz Jammer, ground/air munication - HF to 1000 MHz ISM - instrumentation Description The RF3L05150CB4 is a 150 W, 28/32 V LDMOS FET designed for wide-band munication and ISM applications with frequencies from HF to 1 GHz. It can be used in class AB, B or C for all typical modulation formats. Product status link RF3L05150CB4 Product summary Order code Marking 3L05150 Package Packing Tape and reel 13" Base/bulk quantity 100/100 DS13358 - Rev 3 - March 2021 For further information contact your local STMicroelectronics sales office. .st. Electrical ratings Electrical ratings Symbol VDS VGS VDD TSTG...