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RF3L05150CB4 Datasheet PDF

STMicroelectronics RF3L05150CB4

The RF3L05150CB4 is a 150 W, 28/32 V LDMOS FET designed for wide-band communication and ISM applications with frequencies from HF to 1 GHz. It can be used in class AB, B or C for all typical modulation formats.
Part No. RF3L05150CB4
Datasheet RF3L05150CB4 Download
Manufacturer
STMicroelectronics
Description 150W 28/32V RF power LDMOS transistor
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RF3L05150CB4 datasheet page 1 preview

FEATURES

Order code RF3L05150CB4 Frequency 520 MHz VDD 28 V POUT 150 W Gain 23 dB Efficiency 60 %
● High efficiency and linear gain operations
● Integrated ESD protection
● Large positive and negative gate-source voltage range for improved class C operation
● In compliance with the european directive 2002/95/EC

APPLICATIONS

● 2-30 MHz HF or short wave communication
● 30-88 MHz ground communication
● 118-140 MHz Avionics
● 136-174 MHz commercial ground communication
● 30-512 MHz Jammer, ground/air communication
● HF to 1000 MHz ISM - instrumentation

DESCRIPTION

Product status link RF3L05150CB4 Product summary Order code RF3L05150CB4 Marking 3L05150 Package LBB Packing Tape and reel 13" Base/bulk quantity 100/100 DS13358 - Rev 3 - March 2021 For further information contact your local STMicroelectronics sales office. RF3L05150CB4 Electrical ratings 1 Electrical ratings Symbol VDS VGS VDD TSTG TJ Table 1. Absolute maximum ratings (TC = 25 °C) Parameter Drain-source voltage Gate-source voltage Maximum operating voltage Storage temperature range Maximum junction temperature Table 2.
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