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RF3L05150CB4 - RF power LDMOS transistor

General Description

The RF3L05150CB4 is a 150 W, 28/32 V LDMOS FET designed for wide-band communication and ISM applications with frequencies from HF to 1 GHz.

It can be used in class AB, B or C for all typical modulation formats.

Key Features

  • Order code RF3L05150CB4 Frequency 520 MHz VDD 28 V POUT 150 W Gain 23 dB Efficiency 60 %.
  • High efficiency and linear gain operations.
  • Integrated ESD protection.
  • Large positive and negative gate-source voltage range for improved class C operation.
  • In compliance with the european directive 2002/95/EC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RF3L05150CB4 Datasheet 150 W, 28/32 V, HF to 1 GHz RF power LDMOS transistor 1 2 5 4 LBB 3 Pin connection Pin Connection 1 Drain A 2 Drain B 3 Source (bottom side) 4 Gate B 5 Gate A Features Order code RF3L05150CB4 Frequency 520 MHz VDD 28 V POUT 150 W Gain 23 dB Efficiency 60 % • High efficiency and linear gain operations • Integrated ESD protection • Large positive and negative gate-source voltage range for improved class C operation • In compliance with the european directive 2002/95/EC Applications • 2-30 MHz HF or short wave communication • 30-88 MHz ground communication • 118-140 MHz Avionics • 136-174 MHz commercial ground communication • 30-512 MHz Jammer, ground/air communication • HF to 1000 MHz ISM - instrumentation Description The RF3L05150CB4 is a 1