RF3L05200CB4
RF3L05200CB4 is RF power LDMOS transistor manufactured by STMicroelectronics.
Features
Order code RF3L05200CB4
Frequency 650 MHz
VDD 28 V
POUT 200 W
Gain 19 d B
Efficiency 63%
- High efficiency and linear gain operations
- Integrated ESD protection
- Large positive and negative gate-source voltage range for improved class C operation
- In pliance with the European directive 2002/95/EC
Applications
- 2-30 MHz HF or short wave munication
- 30-88 MHz ground munication
- 118-140 MHz Avionics
- 136-174 MHz mercial ground munication
- 30-512 MHz Jammer, ground/air munication
- HF to 1000 MHz ISM
- instrumentation
Description
The RF3L05200CB4 is a 200 W, 28/32 V, LDMOS FET designed for wideband munication and ISM applications in the frequency range from HF to 1 GHz. It can be used in class AB, B or C for all typical modulation formats.
Product status link RF3L05200CB4
Product summary
Order code
Marking
3L05200
Package
Packing
Tape and reel 13"
Base/bulk quantity
100/100
DS13359
- Rev 2
- September 2021 For further information contact your local STMicroelectronics sales office.
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Electrical ratings
Electrical ratings
Symbol VDS VGS VDD TSTG...
