STMicroelectronics RF3L05200CB4
The RF3L05200CB4 is a 200 W, 28/32 V, LDMOS FET designed for wideband communication and ISM applications in the frequency range from HF to 1 GHz. It can be used in class AB, B or C for all typical modulation formats.| Part No. | RF3L05200CB4 |
|---|---|
| Datasheet | RF3L05200CB4 Download |
| Manufacturer |  STMicroelectronics |
| Description | 200W 28/32V RF power LDMOS transistor |
| Buy | Stock & Price |
FEATURES
Order code RF3L05200CB4 Frequency 650 MHz VDD 28 V POUT 200 W Gain 19 dB Efficiency 63%● High efficiency and linear gain operations
● Integrated ESD protection
● Large positive and negative gate-source voltage range for improved class C operation
● In compliance with the European directive 2002/95/EC
APPLICATIONS
● 2-30 MHz HF or short wave communication● 30-88 MHz ground communication
● 118-140 MHz Avionics
● 136-174 MHz commercial ground communication
● 30-512 MHz Jammer, ground/air communication
● HF to 1000 MHz ISM - instrumentation
DESCRIPTION
Product status link RF3L05200CB4 Product summary Order code RF3L05200CB4 Marking 3L05200 Package LBB Packing Tape and reel 13" Base/bulk quantity 100/100 DS13359 - Rev 2 - September 2021 For further information contact your local STMicroelectronics sales office. RF3L05200CB4 Electrical ratings 1 Electrical ratings Symbol VDS VGS VDD TSTG TJ Table 1. Absolute maximum ratings (TC = 25 °C) Parameter Drain-source voltage Gate-source voltage Maximum operating voltage Storage temperature range Maximum junction temperature Table 2.
