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SD56120M - RF POWER TRANSISTORS

General Description

The SD56120M is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz.

The SD56120M is designed for high gain and broadband performance operating in common source mode at 32 V.

Key Features

  • Excellent thermal stability.
  • Common source configuration Push-pull.
  • POUT = 120W with 13dB gain @ 860MHz / 32V.
  • BeO free package.
  • Internal input matching.

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SD56120M RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features ■ Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 120W with 13dB gain @ 860MHz / 32V ■ BeO free package ■ Internal input matching Description The SD56120M is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120M is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for TV broadcast applications requiring high linearity. M252 Epoxy sealed Pin connection 12 3 54 1. Drain 2. Drain 3. Source 4. Gate 5.