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SD56120 - RF POWER TRANSISTORS

General Description

The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz.

The SD56120 is designed for high gain and broadband performance operating in common source mode at 28 V.

Key Features

  • Excellent thermal stability.
  • Common source configuration Push-pull.
  • POUT = 100 W with 14 dB gain @ 860 MHz.
  • BeO-free package.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SD56120 RF power transistor, the LdmoST family Features ■ Excellent thermal stability ■ Common source configuration Push-pull ■ POUT = 100 W with 14 dB gain @ 860 MHz ■ BeO-free package Description The SD56120 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120 is designed for high gain and broadband performance operating in common source mode at 28 V. It is ideal for broadcast applications from 470 to 860 MHz requiring high linearity. M246 Epoxy sealed Figure 1. Pin connections 12 Table 1. Device summary Order code SD56120 1-2 Drain 4-5 Gate 5 4 3 Source Package M246 Branding SD56120 September 2009 Doc ID 6873 Rev 4 1/15 www.st.