Datasheet Summary
RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
General Features
- Excellent thermal stability
- mon source configuration Push-pull
- POUT = 120W with 13dB gain @ 860MHz / 32V
- BeO free package
- Internal input matching
Description
The SD56120M is a mon source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband mercial and industrial applications at frequencies up to 1.0 GHz. The SD56120M is designed for high gain and broadband performance operating in mon source mode at 32 V. Its internal matching makes it ideal for TV broadcast applications requiring high linearity.
M252 Epoxy sealed
Pin...
