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SH32N65DM6AG - Automotive-grade N-channel Power MOSFET

Datasheet Summary

Description

This device combines two MOSFETs in a half-bridge topology.

The ACEPACK SMIT is a very compact and rugged power module in a surface mount package for easy assembly.

Thanks to the DBC substrate, the ACEPACK SMIT package offers low thermal resistance coupled with an isolated top-side thermal pad.

Features

  • Order code SH32N65DM6AG VDS 650 V RDS(on) max. 97 mΩ ID 32 A.
  • AQG 324 qualified.
  • Half-bridge power module.
  • 650 V blocking voltage.
  • Fast recovery body diode.
  • Very low switching energies.
  • Low package inductance.
  • Dice on direct bond copper (DBC) substrate.
  • Low thermal resistance.
  • Isolation rating of 3.4 kVrms/min.

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Datasheet preview – SH32N65DM6AG

Datasheet Details

Part number SH32N65DM6AG
Manufacturer STMicroelectronics
File Size 471.55 KB
Description Automotive-grade N-channel Power MOSFET
Datasheet download datasheet SH32N65DM6AG Datasheet
Additional preview pages of the SH32N65DM6AG datasheet.

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    Full PDF Text Transcription

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    SH32N65DM6AG Datasheet Automotive-grade N-channel 650 V, 89 mΩ typ., 32 A MDmesh DM6 half‑bridge topology Power MOSFET in an ACEPACK SMIT package 89 7 7 8 9 1 3 64 6 4 13 ACEPACK SMIT GADG060720221002SA 9 (DC+) 1 (GHS) 2 (KHS) 3, 4 (NC) 6 (GLS) 5 (KLS) 7 (U) 8 (DC-) Features Order code SH32N65DM6AG VDS 650 V RDS(on) max. 97 mΩ ID 32 A • AQG 324 qualified • Half-bridge power module • 650 V blocking voltage • Fast recovery body diode • Very low switching energies • Low package inductance • Dice on direct bond copper (DBC) substrate • Low thermal resistance • Isolation rating of 3.4 kVrms/min Applications • Switching applications Description This device combines two MOSFETs in a half-bridge topology.
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