SH32N65DM6AG Datasheet | STMicroelectronics

Automotive-grade N-channel 650 V, 89 mΩ typ., 32 A MDmesh DM6 half‑bridge topology Power MOSFET in an ACEPACK SMIT package 89 7 7 8 9 1 3 64 6 4 13 ACEPACK SMIT GADG060720221002SA 9 (DC+) 1 (GHS) 2 (KHS) 3, 4 (NC) 6 (GLS) 5 (KLS) 7 (U) 8 (DC-) Features Order code SH32N65DM6AG VDS 650 V RDS(on) max. 97 mΩ ID 32 A - AQG 324 qualified - Half-bridge power module - 650 V blocking voltage - Fast recovery body diode - Very low switching energies - Low package inductance - Dice on direct bond copper (DBC) substrate - Low thermal resistance - Isolation rating of 3.4 k Vrms/min Applications - Switching applications Description This device bines two MOSFETs in a half-bridge topology. The ACEPACK SMIT is a very pact and rugged power module in a surface mount package for easy assembly. Thanks to the DBC substrate, the ACEPACK SMIT package offers low thermal resistance coupled with an isolated top-side thermal pad. The high design flexibility of the package enables several configurations, including phase legs, boost, and single switch through different binations of the internal power...