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SOA56 Datasheet

SMALL SIGNAL PNP TRANSISTOR

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SOA56
SMALL SIGNAL PNP TRANSISTOR
Type
SOA56
Marking
2GT
s SILICON EPITAXIAL PLANAR PNP
TRANSISTORS
s MINIATURE PLASTIC PACKAGE FOR
APPLICATION IN SURFACE MOUNTING
CIRCUITS
s MEDIUM CURRENT AF AMPLIFICATION
s NPN COMPLEMENTS IS SOA06
2
3
1
SOT-23
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
V EBO
IC
Ptot
Tstg
Tj
Parameter
Collect or-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitt er-Base Voltage (IC = 0)
Collector Current
Total Dissipation at Tc = 25 oC
St orage Temperature
Max. Operating Junction Temperature
March 1996
Value
-80
-80
-4
-0.5
350
-65 to 150
150
Unit
V
V
V
A
mW
oC
oC
1/4


STMicroelectronics Electronic Components Datasheet

SOA56 Datasheet

SMALL SIGNAL PNP TRANSISTOR

No Preview Available !

SOA56
THERMAL DATA
Rthj- amb Thermal Resistance Junction-Ambient
Mounted on a ceramic substrate area = 15 x 15 x 0.5 mm
Max
350
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
P a ram et er
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
ICEO
Collector Cut-off
Current (IE = 0)
V( BR)CEO Collect or-Emitter
Breakdown Voltage
(IB = 0)
V(BR)EBO
Em it t er -Base
Breakdown Voltage
(IC = 0)
VCE(sat)Collect or-Emitter
Saturation Voltage
VCB = -80 V
VCE = -60 V
IC = -1 mA
IE = -100 µA
IC = -100 mA IB = -10 mA
VBE(on)Base-Emitt er O n
Voltage
IC = -100 mA VCE = -1 V
hFEDC Current G ain
IC = -10 mA
IC = -100 mA
VCE = -1 V
VCE = -1 V
fT Transit ion F requency IC = -10 mA VCE = -2 V f = 100 MHz
Pulsed: Pulse duration = 300 µs, duty cycle 2 %
Min.
-80
-4
50
50
50
Typ .
M a x.
-100
-100
-0.25
-1.2
Unit
nA
nA
V
V
V
V
MHz
2/4


Part Number SOA56
Description SMALL SIGNAL PNP TRANSISTOR
Maker ST Microelectronics
Total Page 4 Pages
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