ST13007B transistor equivalent, high voltage fast-switching npn power transistor.
* DC current gain classification
* High voltage capability
* Low spread of dynamic parameters
* Very high switching speed
Applications
* Electronic ba.
* Electronic ballast for fluorescent lighting
* Switch mode power supplies
Description
The device is manufacture.
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the.
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