High voltage fast-switching NPN power transistor
■ DC current gain classification
■ High voltage capability
■ Low spread of dynamic parameters
■ Very high switching speed
■ Electronic ballast for fluorescent lighting
■ Switch mode power supplies
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and high voltage capability.
It uses a cellular emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
Figure 1. Internal schematic diagram
Table 1. Device summary
1. The product is classified in DC current gain group A and group B, see Table 5: hFE classification. STMicroelectronics
reserves the right to ship from any group according to production availability.
Doc ID 5263 Rev 4