ST13007D Description
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM RATINGS Symbol VCEV VCEO VEBO IC ICM IB IBM Ptot Tstg Tj Parameter Collector-Emitter Voltage (VBE = -1.5V) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0)...