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ST13007D - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

General Description

The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.

It uses a Cellular Emitter structure to enhance switching speeds.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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® ST13007D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s IMPROVED SPECIFICATION: - LOWER LEAKAGE CURRENT - TIGHTER GAIN RANGE - DC CURRENT GAIN PRESELECTION - TIGHTER STORAGE TIME RANGE s HIGH VOLTAGE CAPABILITY s INTEGRATED FREE-WHEELING DIODE s LOW SPREAD OF DYNAMIC PARAMETERS s MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION s VERY HIGH SWITCHING SPEED s FULLY CHARACTERIZED AT 125 oC s LARGE RBSOA APPLICATIONS s UP TO 120W ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS s SWITCH MODE POWER SUPPLIES DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. It uses a Cellular Emitter structure to enhance switching speeds.