Semtech Corporation ST13005
NPN Silicon Power Transistors
ABSOLUTE MAXIMUM RATINGS
(Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation (Ta = 25 OC) Power Dissipation (Tc = 25 OC) Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 5 V, IC = 1 A at VCE = 5 V, IC = 2 A Collector Base Cutoff Current at VCB = 700 V Emitter Base Cutoff Current at VEB = 9 V Collector Emitter Breakdown Voltage at IC = 10 mA Collector Emitter Saturation Voltage at IC = 1 A, IB = 0.2 A at IC = 2 A, IB = 0.5 A at IC = 4 A, IB = 1 A Base Emitter Saturation Voltage at IC = 1 A, IB = 0.2 A at IC = 2 A, IB = 0.5 A Gain Bandwidth Product at VCE = 10 V, IC = 500 mA, f = 1 MHz Collector Base Capacitance at VCB = 10 V, f = 0.1 MHz TO-220 Plastic Package Symbol VCBO VCEO VEBO IC Ptot Ptot Tj Tstg Value 700 400 9 4 2 75 150 - 55 to + 150 Unit V V V A W W OC OC Symbol Min. hFE hFE ICBO 10 8 - IEBO - V(BR)CEO 400 VCE(sat) VCE(sat) VCE(sat) VBE(sat) VBE(sat) fT Cob - - 4 - Typ. - - - - - 65 Max.