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ST13005 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

General Description

This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability.

It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA.

production data 3

Key Features

  • Low spread of dynamic parameters.
  • Minimum lot-to-lot spread for reliable operation.
  • Very high switching speed.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ST13005 High voltage fast-switching NPN power transistor Features ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description This device is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining a wide RBSOA. Datasheet − production data 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking(1) Package Packaging ST13005 13005 A 13005 C 13005 D 13005 E 13005 F TO-220 Tube 1.