Datasheet4U Logo Datasheet4U.com

ST13003D-K - High voltage fast-switching NPN power transistor

General Description

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability.

It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

Key Features

  • High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Integrated antiparallel collector-emitter diode 2 1.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
ST13003 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ST Microelectronics
ST13003 NPN Silicon Epitaxial Planar Transistor SEMTECH
ST13003-K HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR ST Microelectronics
ST13001 NPN Silicon Epitaxial Planar Transistor SEMTECH
ST13005 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
ST13007DFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
ST13009 High voltage fast-switching NPN power transistor
ST10F269-T3 16-BIT MCU
ST10F269Z1Q3 16-BIT MCU
ST10F269Z1Q6 16-BIT MCU

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com ST13003D-K High voltage fast-switching NPN power transistor Features ■ ■ ■ ■ ■ High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Integrated antiparallel collector-emitter diode 2 1 Applications ■ 3 SOT-32 Electronic ballast for fluorescent lighting Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications. Figure 1. Internal schematic diagram Table 1.