ST13007B Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. TAB 3 2 1 TO-220 Figure.
ST13007B Key Features
- DC current gain classification
- High voltage capability
- Low spread of dynamic parameters
- Very high switching speed
ST13007B Applications
- Electronic ballast for fluorescent lighting