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ST 13001
NPN Silicon Epitaxial Planar Transistor
for high voltage and high speed switching applications
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Total Power Dissipation Junction Temperature Storage Temperature Range
1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g
Symbol VCBO VCEO VEBO IC Ptot Tj TS Symbol hFE hFE ICBO ICEO IEBO V(BR)CBO V(BR)CEO V(BR)EBO VCE(sat) VBE(sat) fT tf ts
Value 500 400 9 0.3 0.75 150 - 55 to + 150 Min. 5 10 500 400 9 8 Max. 40 100 200 100 0.5 1.2 0.3 1.5
Unit V V V A W
O
C C Unit µA µA µA V V V V V MHz µs µs
O
Characteristics at Ta = 25 C
O
Parameter DC Current Gain at VCE = 10 V, IC = 0.
ST13001 Datasheet
