The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability.
They use a Cellular Emitter structure to enhance switching speeds.
| Part number | 13007N |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 94.52 KB |
| Description | ST13007N |
| Datasheet |
 13007N Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| 13007 | NPN Silicon Transistor | Trea Sure Star |
| 13007 | NPN Transistor | Micro Electronics |
| 13007 | NPN Transistor | Jiangsu Changjiang |
| 13007 | NPN Epitaxial Silicon Transistor | Elite |
| 13007A | MJE13007A | Mospec Semiconductor |
| Part Number | Description |
|---|---|
| 13003 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 13005A | High voltage fast-switching NPN power transistor |
| 13005C | High voltage fast-switching NPN power transistor |
| 13005D | High voltage fast-switching NPN power transistor |
| 13005E | High voltage fast-switching NPN power transistor |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
