Datasheet4U Logo Datasheet4U.com

13007DL - Bipolar Junction Transistor

Key Features

  • Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．.

📥 Download Datasheet

Datasheet Details

Part number 13007DL
Manufacturer Jingdao
File Size 115.78 KB
Description Bipolar Junction Transistor
Datasheet download datasheet 13007DL Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
13007 NPN Silicon Transistor Trea Sure Star
13007 NPN Transistor Micro Electronics
13007 NPN Transistor Jiangsu Changjiang
13007 NPN Epitaxial Silicon Transistor Elite
13007A MJE13007A Mospec Semiconductor

Other Datasheets by Jingdao

Part Number Description
13007S Bipolar Junction Transistor
13007T Bipolar Junction Transistor
13001-2 NPN power transistor
13001-A NPN power transistor
13003AD Bipolar Junction Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
R www.jdsemi.cn ShenZhen Jingdao Electronic Co.,Ltd. 13007DL Bipolar Junction Transistor ◆Si NPN ◆RoHS COMPLIANT 1．APPLICATION Mainly used for 110V power Fluorescent Lamp、 Electronic Ballast，etc 2．FEATURES Intergrated antiparallel collector-emitter diode Features of good high temperature High switching speed 3．PACKAGE 1 VD TO-220 4．Electrical Characteristics 4.1 Absolute Maximum Ratings 1 Base(B) 2 Collector(C) 3 Emitter(E) Tamb= 25℃ unless specified PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emittor Voltage Emittor- Base Voltage Collector Current Power Dissipation Ta=25℃ Tc=25℃ Junction Temperature Storage Temperature 4.