Datasheet Details
| Part number | ST2001FX |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 202.39 KB |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Datasheet | ST2001FX_STMicroelectronics.pdf |
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Overview: www.DataSheet4U.com ST2001FX HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L.
| Part number | ST2001FX |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 202.39 KB |
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Datasheet | ST2001FX_STMicroelectronics.pdf |
|
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The d e vice is m an u fa ctu r ed u sin g Diff us ed Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation.
ISOWATT218FX INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC ICM IB Ptot Vins Tstg Tj October 2003 Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Total Dissipation at Tc = 25 °C Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max.
Operating Junction Temperature Value 1500 600 7 10 20 7 63 2500 –65 to 150 150 Unit V V V A A A W V °C °C 1/7 www.DataSheet4U.com ST2001FX THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2 °C/W ELECTRICAL CHARACTERISTICS (Tj = 25 °C unless otherwise specified) Symbol ICES IEBO VCEO(sus)* Parameter Collector Cut-off Current (VBE = 0) Emitter Cut-off Current (IC = 0) Collector-Emitter Sustaining Voltage (IB = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain INDUCTIVE LOAD Storage Time Fall Time VCE = 1500 V VCE = 1500 V VEB = 7 V IC = 100 mA 600 Test Conditions Tj = 125 °C Min.
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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ST2001HI | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | ST Microelectronics |
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