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ST2001HI Datasheet High Voltage Fast-switching NPN Power Transistor

Manufacturer: STMicroelectronics

Overview: ® ST2001HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s NEW SERIES, ENHANCED PERFORMANCE s FULLY INSULATED PACKAGE (U.L.

General Description

The ST2001HI is manufactured using Diffused Collector technology for more stable operation Vs base drive circuit variations resulting in very low worst case dissipation.

3 2 1 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC ICM IB Ptot Visol Tstg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Total Dissipation at Tc = 25 oC Insulation Withstand Voltage (RMS) from All Three Leads to External Heatsink Storage Temperature Max.

Operating Junction Temperature December 2002 Value 1500 600 7 10 20 7 55 2500 -65 to 150 150 Unit V V V A A A W V oC oC 1/6 ST2001HI THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 2.3 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICES Collector Cut-off Current (VBE = 0) VCE = 1500 V VCE = 1500 V TC = 125 oC IEBO Emitter Cut-off Current (IC = 0) VCEO(sus)∗ Collector-Emitter Sustaining Voltage (IB = 0) VCE(sat)∗ Collector-Emitter Saturation Voltage VEB = 7 V IC = 100 mA IC = 5 A L = 25 mH IB = 1.25 A VBE(sat)∗ Base-Emitter Saturation Voltage IC = 5 A IB = 1.25 A hFE∗ DC Current Gain IC = 6 A IC = 6 A VCE = 1 V VCE = 5 V INDUCTIVE LOAD IC = 5 A ts Storage Time LBB(off) = 2 µH tf Fall Time fh = 64 KHz ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % IBon(END) =850 mA VBB(off) = -2.5 V Min.

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